Modified chip attach process and apparatus

ABSTRACT

A method of packaging a die includes reflowing the solder to electrically connect the die to a substrate at a first temperature, cooling the die and substrate to a second temperature, and placing a heated epoxy in contact with the die and the substrate. The method also includes holding the die and substrate at the second temperature for a time sufficient to allow the epoxy to cure, and cooling the die, substrate and epoxy. The second temperature is less than the first temperature. In addition, the die and substrate are not cooled to a temperature significantly below the second temperature until after the heated epoxy is placed in contact with the die and substrate.

RELATED APPLICATION(S)

This application is a Divisional of U.S. application Ser. No. 10/675,880filed on Sep. 30, 2003 which is incorporated herein by reference.

FIELD OF THE INVENTION

The present invention relates generally to apparatus and methods forpackaging a device. More particularly, it relates to modified chipattach process and apparatus used for packaging a device.

BACKGROUND OF THE INVENTION

Typically a large number of semiconductor devices are formed on wafers.The semiconductor devices are formed by repeating a number of basicoperations on a wafer. The basic operations include layering,patterning, doping, and heat processing. The final semiconductor formedhas many layers of material and includes as many as 10,000 or moreindividual transistors. Rather than make each semiconductor deviceindividually, a number of devices are formed on a single wafer. Theentire wafer is subjected to the basic operations discussed above inorder to form hundreds of semiconductor chips or devices. Typically,after the semiconductor devices are formed, the semiconductor devicesare tested and sorted. Next, the wafer is sliced and diced so that eachindividual semiconductor device is separated from the others formed onthe wafer.

The individual semiconductor devices are formed on fragile material. Asa result, the individual semiconductor devices are packaged, in part forphysical protection. Packaging also dissipates the heat from thesemiconductor and provides connections or leads between the individualchip or die and an exterior portion of the package. The leads allow forelectrical connection between the chip or die and a printed circuitboard or other device.

There are many different types of packages. One common package is a flipchip package which has a series of bumps or balls or leads formed in anarray on a surface of a substrate. The substrate includes a number ofpads, typically laid out in an array. Solder individually, or mixed withflux is deposited onto the pads and then the substrate is heated. Theheat applied is sufficient to reflow the solder and melt the solder to aliquid state. The flux material is used to clean the metal pads on thedie and the substrate, and the solder of any oxides that may have beenformed on it. Removal of the oxides allows for good solder wetting andgood joint formation. The material surrounding the solder pad typicallyrepels or resists the liquid solder. The liquid solder, therefore, wetsto the surface of the pad and the surface tension of the liquid soldercauses the solder to form a ball or bump. The ball or bump shape ismaintained while the solder cools. The silicon die along with thesubstrate and the interconnections between them is referred to as anelectronic package or simply the “package”. Typically, the entirepackage is heated and cooled to attach the die to the substrate. In mostmanufacturing processes, the package is reheated and cooled a number ofadditional times as the part of the manufacturing process. The die orchip within the package is also reheated and cooled an additional numberof times. In some packaging operations, the package is reheated to cleanthe package of residual flux that may be burnt and charred during thedie to substrate assembly process. A liquid is typically used to cleanthe package of excess solder, and the package is cooled. The next stepis to reheat the package again to drive off any remaining liquid thatmay have been absorbed by the packaging materials during the residualflux cleaning operation. The substrate is then cooled. Finally, an epoxyis used to encapsulate the solder balls between the die and thesubstrate. Part of the encapsulation includes placing epoxy between thedie and the package. This is referred to as underfilling the package.The epoxy can be pressurized during underfill or the epoxy can be heatedand capillary action used to underfill the package. The epoxy adhesiveis heated so that the epoxy flows into the spaces between the die andthe substrate. The substrate and die or chip are then cooled again. Alid can then be placed on the package. After the packaging process iscomplete, heat is then managed using heat sinks or the like with thepackage as it operates.

Partial encapsulation is discussed above. Another common package usedfor flip chips is a molded epoxy enclosure. In this type of package, thedie is attached to a lead frame. Then the entire die and lead frame isplaced in a mold. The lead frame and the package is then surrounded withepoxy material that has been softened and heated previously. Althoughthe process is somewhat different, it should be noted that the die orchip is subjected to repeated heating and cooling.

When the layers in a die or chip are subjected to thermal cycling of themagnitude as from reflowing the solder, washing away excess flux,driving off liquid from the washing operation and from eitherunderfilling the space between the chip and the substrate or molding thepackage around the chip or die, delamination may occur between thelayers in the die or chip. The repeated thermal cycles during the chipor die attach process cause delamination of the inner layer dielectrics(ILD) on the die. The ILD is a fragile, thin film layer. Whendelamination occurs, the chip or die fails. The delamination may resultin significant yield losses. The delamination of the ILD may not onlycause current failures, but can also cause latent failures that occurafter the chip has left the manufacturing site. Failure of components isnever desirable and generally requires more effort when the chip is inthe field and must be replaced.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention is pointed out with particularity in the appended claims.However, a more complete understanding of the present invention may bederived by referring to the detailed description when considered inconnection with the figures, wherein like reference numbers refer tosimilar items throughout the figures and:

FIG. 1A is schematic cutaway view of a semiconductor package, accordingto an embodiment of the invention.

FIG. 1B is schematic cutaway view of a semiconductor package, accordingto an embodiment of the invention.

FIG. 2 is a flow chart of a method for forming a semiconductor package,according to an embodiment of the invention.

FIG. 3 is a flow chart of a method for forming a semiconductor package,according to another embodiment of the invention.

FIG. 4 is a flow chart of a method for forming a semiconductor package,according to yet another embodiment of the invention.

FIG. 5 is a graph showing the temperature of the semiconductor packagewith respect to time, according to an embodiment of this invention.

FIG. 6 is a schematic diagram of an apparatus for attaching thesemiconductor package and placing a curable material in contact with thepackage, according to an embodiment of this invention.

FIG. 7 is a schematic diagram of an apparatus for attaching thesemiconductor package and placing a curable material in contact with thepackage, according to another embodiment of this invention.

FIG. 8 is a schematic diagram of a computer system that can be used tocontrol the apparatus for attaching the semiconductor package and curinga material in contact with the package, according to an embodiment ofthis invention.

FIG. 9 is a block diagram of a computer-readable medium that includes aninstruction set therein, according to an embodiment of this invention.

The description set out herein illustrates the various embodiments ofthe invention and such description is not intended to be construed aslimiting in any manner.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings, which are not necessarily to scale, which form apart hereof, and in which is shown, by way of illustration, specificembodiments in which the apparatus and methods can be practiced. Theseembodiments are described in sufficient detail to enable those skilledin the art to practice them, and it is to be understood that theembodiments can be combined, or that other embodiments can be utilizedand that procedural changes can be made without departing from thespirit and scope of the present invention. The following detaileddescription is, therefore, not to be taken in a limiting sense, and thescope is defined by the appended claims and their equivalents. In thedrawings, like numerals describe substantially similar componentsthroughout the several views.

FIGS. 1A and 1B are schematic cutaway views of semiconductor packages,according to an embodiment of the invention. FIG. 1A is a schematiccutaway view of a semiconductor package 100. The semiconductor package100 includes a die 110 and a substrate 120. The die 110 is attached tothe substrate 120 with solder 112. The solder 112 is actually formedinto solder balls on one surface of the die 110. The substrate 120includes pads 122. The pads 122 are arranged on the substrate 120 in thesame geometric configuration or layout as the solder balls 112 on thesubstrate 110. The substrate 110 and the solder balls 112 are placed onto the pads 122 of the substrate and the substrate 120 and die or chip110 is heated so that the solder reflow and connects the die 110 to thepads 122 of the substrate 120. As shown in FIG. 1A, the space betweenthe substrate 120 and the die or chip 110 is underfilled with thecurable substance, such as an epoxy. As shown in FIG. 1A, the underfillarea has a reference numeral 130. It should be noted that an underfilledarea 130 can be formed either by capillary action or by injection.Underfilling by capillary action is generally less stressful on the chipor die 110. After the underfill area 130 is formed, a cap or lid 140 isplaced onto the substrate to complete the semiconductor package 100.

FIG. 1B shows a second type of semiconductor package 150. Thesemiconductor package includes a chip or die 110 and a substrate 120.The die 110 has balls of solder 112 arranged in a pattern on one side ofthe die 110. The substrate 120 includes a plurality of pads 122 that arearranged in a similar geometric shape so that the solder balls 112 alignwith the pads 122 of the substrate. An epoxy material or other curablematerial 160 is over molded around the die 110 and the substrate 120 tocomplete the semiconductor package 150. Over molding generally requiresinjection of a curable substance such as epoxy or a similar substance.

FIG. 2 is a flow chart of a method 200 for attaching a die to asubstrate thereby forming a semiconductor package, according to anembodiment of the invention. The method 200 of packaging a die includesreflowing the solder to electrically connect the die to a substrate at afirst temperature 210, cooling the die and substrate to a secondtemperature 212, and placing a heated epoxy or another curable materialin contact with the die and the substrate 214. The method 200 furtherincludes holding the die and substrate at the second temperature for atime sufficient to allow the epoxy to cure 216, and cooling the die,substrate and epoxy 218. The second temperature that the epoxy or othermaterial cures at is less than the first temperature. The die andsubstrate are not cooled to a temperature significantly below the secondtemperature until after the heated epoxy is placed in contact with thedie and substrate 214. In other words, the die and substrate are notheated and cooled to room temperature in a first reflow step and thenheated and cooled in a step where epoxy or another curable material isplaced in contact with the die. As a result, at least one thermal cycleof the die and substrate is eliminated. This in turn reduces the amountof stress placed on the die and substrate and also reduces the amount ofstress on the inner layer dielectrics (ILD) of the die. The ILD is afragile, thin film layer. Reduction of the stress at the ILD alsoreduces the chance for delamination at the ILD. As mentioned previously,when delamination occurs at the ILD, the chip or die fails so reducingthe chance for delamination at the ILD improves yields, especially incertain semiconductor packages, such as packages that include dieshaving a fragile, thin film layers in the ILD. It should be noted thatdelamination of the ILD may not only cause current failures, but canalso cause latent failures that occur after the semiconductor packagehas left the manufacturing site. As a result, reducing the number ofthermal cycles during chip attach and packaging also decreases thenumber of field failures of the semiconductor package since there willbe a lesser number of latent failures due to delamination. In addition,the invention as set forth above and below, reduces the amount of timerequired to form the semiconductor package. The reduced amount of timefor assembly translates into a reduced cost for packaging thesemiconductor.

In some embodiments, placing heated epoxy in contact with the die andthe substrate 214 includes underfilling the space between the die andthe substrate. In other embodiments of the invention, the die andsubstrate are overmolded with epoxy or some other curable material toform the package. The method further includes placing a lid over the dieand the substrate. Placing the heated epoxy in contact with the die andthe substrate includes overmolding the die, according to one embodimentof the invention. According to an embodiment of the invention, aftersolder reflow, the die and substrate remain above or at the secondtemperature until the epoxy cures. The second temperature issufficiently lower than the first temperature to allow the reflowedsolder to solidify. The method also includes selecting an epoxy thatcures at a temperature near the temperature associated with reflow ofthe solder. The method further includes selecting a flux that does notleave a residue as a result of reflow.

FIG. 3 is a flow chart of a method 300 for forming a semiconductorpackage, according to another embodiment of the invention. The method300 of packaging a die includes selecting a solder that does not leave aresidue as a result of reflow 310, reflowing the solder to electricallyconnect the die to a substrate at a first temperature 311, and coolingthe die and substrate to a second temperature 312. The method 300includes selecting an epoxy that cures at a temperature near thetemperature associated with reflow of the solder 313, placing a heatedepoxy or another curable material in contact with the die and thesubstrate 314, holding the die and substrate at the second temperaturefor a time sufficient to allow the epoxy to cure 316, and cooling thedie, substrate and epoxy 318. The second temperature that the epoxy orother material cures at is less than the first temperature. The die andsubstrate are not cooled to a temperature significantly below the secondtemperature until after the heated epoxy is placed in contact with thedie and substrate 314. Of course, the epoxy or other curable materialwith a curing temperature near the reflow temperature must have a curingtemperature which is less than the reflow temperature of the solder usedon the die so that as the epoxy or other curable material cures, thesolder does not reflow. Generally, the higher the curing temperature theshorter the time required to cure the curable material. Therefore, amaterial having a cure temperature close to the temperature for reflowwill be desirable since the time required to reflow the solder 311 andcure the epoxy will be minimized. Of course, other factors must beconsidered in choosing the epoxy or other curable material that forms atleast a portion of the semiconductor package.

As a result, at least one thermal cycle of the die and substrate iseliminated. More than likely several additional thermal cycles are alsoeliminated. Selecting a solder that does not leave a residue as a resultof reflow 310 eliminates thermal cycling due to washing solder residueand heating the package to drive off any liquid that remains fromwashing the die and substrate of any solder residue. Again, this reducesthe amount of stress placed on the die and substrate and also reducesthe amount of stress on the inner layer dielectrics (ILD) of the die.The ILD is a fragile, thin film layer. Reduction of the stress at theILD also reduces the chance for delamination at the ILD. Elimination ofany washing step and subsequent step to drive off liquids that remainfrom washing also reduces the time needed to attach a die to a substrateand form a semiconductor package. The reduced amount of time forassembly translates into a reduced cost for packaging the semiconductor.

FIG. 4 is a flow chart of a process 400 for forming a semiconductorpackage, according to yet another embodiment of the invention. Theprocess 400 for assembling a package for a semiconductor device includesreducing the stress in an inner dielectric layer during packaging byheating the die and the substrate to a temperature where the solderreflows 410, dropping to a temperature where a selected epoxy will cure412, liquefying the epoxy 414, adding the liquefied epoxy to the die andsubstrate 416, and maintaining the die and substrate at a temperaturewhere the epoxy cures for a selected amount of time 418. The processalso includes adding a flux that leaves reduced amounts of residue afterheating the die and solder to a temperature where the solder reflows420. The steps of cleaning the die of excess flux residue and drivingoff the excess liquid are eliminated. Adding the liquefied epoxy to thedie and substrate includes underfilling the space between the die andsubstrate with liquefied epoxy. In one embodiment of the invention,capillary action is used to underfill the space between the die and thesubstrate. In another embodiment of the invention, the epoxy ispressurized and injected into the space between the die and thesubstrate to underfill the space between the die and the substrate.Underfilling using capillary action places less stress and less force onthe die and, so, is very useful in packaging dies that are fragile orthat have ILDs that are prone to delamination. Underfilling usingcapillary action can be followed by placing a lid on the die to completethe semiconductor package.

FIG. 5 is a graph 500 showing the temperature of the semiconductorpackage with respect to time, according to an embodiment of thisinvention. The graph 500 shows the temperature of the semiconductorpackage 100, 150 with respect to time during the manufacturing process.Specifically, the time is on the horizontal or X axis, and temperatureis on the Y or vertical axis in graph 500. The temperature is initiallybrought up to a first temperature depicted by temperature t₁ and is heldat temperature t₁ for a sufficient amount of time to allow the solderball 112 of the die to reflow and connect to the substrate 120. Thesolder balls 112 and substrate 120 are not shown in FIG. 5, but rathercan be seen in FIGS. 1A and 1B. Once the chip or die has been connectedor attached to the substrate, the temperature is lowered to atemperature t₂ and underfill is attached either during the time when thetemperature is dropping from t₁ to t₂ or at the beginning of the timewhen t₂ is held at constant as depicted by arrow 510. Once the underfillor curable material is dispensed, the temperature t₂ is held constantfor a time sufficient for the underfill material to cure as depicted bybracket 520. Once the underfill has cured or once the epoxy materialplaced in contact with the die 110 and substrate 120 (shown in FIG. 1)has cured, the temperature of the substrate and die is dropped to alower temperature. It is assumed that the lower temperature is roughlyroom temperature in a manufacturing site. It should also be noted that acurable material can be dispensed at the time during the temperatures t₁and t₂ are at the beginning of the time for the curing step. Thematerial need not necessarily be limited to an underfill material butcan also be an epoxy used for overmolding the chip or die 110 and thesubstrate 120 (shown in FIG. 1). In other words, the time andtemperature graph 500 shown in FIG. 5 can apply to either an underfillprocedure or an overmolding procedure where at the part is totallyencapsulated with a curable material, such as epoxy.

FIG. 6 is a schematic diagram of a system 600 for attaching thesemiconductor package and placing a curable material in contact with thepackage, according to an embodiment of this invention. The system 600for forming a semiconductor package includes a conveyor 610. The die andsubstrate 620 that eventually form a semiconductor package, are conveyedin the direction as depicted by the arrow 612. The system 600 includes asolder reflow station 630 that heats a die and a substrate 620 to reflowsolder so that the die is electrically connected to the substrate. Inone embodiment of the invention, the reflow station 630 is an elongatedoven through which the die and the substrate are conveyed. The rate ofconveyance through the length of the oven can be controlled to allow theoven adequate time to reflow the solder. In some embodiments, theconveyor 610 constantly conveys the die and substrate 620 through theoven. In other embodiments, the conveyor 610 stops periodically toextend the amount of time the die and substrate 620 stay in the oven.The reflow station 630 operates at least at a first temperature thatallows solder to reflow. The system 600 also includes a station forplacing material in contact with at least a portion of the die 640 at asecond temperature. The second temperature is less than the firsttemperature. The die and substrate 620 are heated to the firsttemperature and cooled to the second temperature without cooling the dieand substrate to a temperature significantly below the secondtemperature between the solder reflow station 630 and the station forplacing material in contact with at least a portion of the die 640. Inone embodiment, the station for placing material in contact with a leasta portion of the die 640 includes a device for placing a heated epoxy incontact with the die and the substrate. The station for placing materialin contact with a least a portion of the die includes a device forunderfilling the space between the die and the substrate with a heatedepoxy. In one embodiment, the station for placing material in contactwith a least a portion of the die includes a device for underfilling thespace between the die and the substrate with a heated epoxy usingcapillary action. In other embodiments, the epoxy is used to underfillthe die using a pressurized injection process. In still otherembodiments, the station for placing material in contact with at least aportion of the die 640 includes a device used to overmold the die andsubstrate to form the package. The system 600 further includes a curingstation 650 for holding the die and substrate at the second temperaturefor a time sufficient to allow the epoxy to cure. In one embodiment ofthe invention, the curing station 650 is another oven through whichconveyor 610 conveys the die and substrate. The rate of conveyancethrough the length of the oven can be controlled to allow the ovenadequate time to cure the epoxy or other curable material. In someembodiments, the conveyor 610 constantly conveys the die and substrate620 through the oven. In other embodiments, the conveyor 610 stopsperiodically to extend the amount of time the die and substrate 620 stayin the curing oven.

FIG. 7 is a schematic diagram a system 700 for attaching thesemiconductor package and placing a curable material in contact with thepackage, according to another embodiment of this invention. In someembodiments, the system 700 includes a plurality of stations for placingmaterial in contact with at least a portion of the die and the solderreflow station are located at a single location. In still otherembodiments, the system 700 includes the station for placing material incontact with at least a portion of the die, the solder reflow stationplacing material, and the curing station at a single location. Thesystem 700 includes a single oven 710 into which the die and substrateare placed at a first temperature to cause solder reflow, and that dropsto a second lesser temperature for curing of epoxy placed as either anunderfill or for encapsulation of the die and substrate. The system 700also includes a device 720 for placing the epoxy or other material incontact with the die. There may also be a curing temperature. The systemholds the oven at the curing temperature for a time sufficient to allowthe epoxy to cure.

The die 110 and substrate 120 may be conveyed through the oven 710 orthere may be a robotic picking mechanism for picking and placing the die110 and substrate 120 during the chip attack and package competitionportion of manufacturing.

Each of the systems 600, 700 for attaching the semiconductor package andplacing a curable material in contact with the package can be operatedunder the control of a computer. FIG. 8 is a schematic diagram of acomputer system 2000 that can be used to control the system 600, 700 forattaching the semiconductor package and curing a material in contactwith the package, according to an embodiment of this invention. Thecomputer system 2000 may also be called an electronic system or aninformation handling system. The computer or information handling system2000 includes a central processing unit 2004, a random access memory2032, a read only memory 2034, and a system bus 2030 for communicativelycoupling the central processing unit 2004 and the random access memory2032 and the read only memory. The information handling system 2002 alsoincludes an input/output bus 2010 and several devices peripheraldevices, such as 2012, 2014, 2016, 2018, 2020, and 2022 may be attachedto the input output bus 2010. Peripheral devices may include hard discdrives, magneto optical drives, floppy disc drives, monitors, keyboardsand other such peripherals.

FIG. 9 is a block diagram of a computer-readable medium 900 thatincludes an instruction set 910 therein. The computer-readable mediumcan be any type of memory, a disk used for magnetic disk storage,optical disk storage, flash memory devices, or other machine-readablemedia. Media can also be read-only memory or random-access memory, whichis part of a hardware configuration for a computer system. Furthermore,the media can also include the internet, storage available to a server,or a transmission of any sort, connected or wireless, that is used totransmit the instructions to a computer system.

A computer program product for use with a computer system associatedwith a device such as a set of stations in a semiconductor packagingoperation, the computer program product includes a computer usablemedium that causes a computer to execute the methods and processes setforth in FIGS. 2-4 above. In other words, a set of instructions 910associated with the computer program product and executable by asuitably programmed information handling system and embodied in thecomputer usable medium causes the computer system 800 to execute themethods and processes set forth in FIGS. 2-4 and detailed in the aboveparagraphs.

It is to be understood that the above description is intended to beillustrative and not restrictive. Many other embodiments will beapparent to those of skill in the art upon reviewing the abovedescription. The scope of the invention should, therefore, be determinedwith reference to the appended claims, along with the full scope ofequivalents to which such claims are entitled.

1. A process for assembling a package for a semiconductor devicecomprising: reducing the stress in an inner dielectric layer duringpackaging by heating the die and the substrate to a temperature where asolder reflows; dropping to a temperature where a selected epoxy willcure; liquefying the epoxy; adding the liquefied epoxy to the die andsubstrate; and maintaining the die and substrate at a temperature wherethe epoxy cures for a selected amount of time.
 2. The process of claim 1further comprising adding a flux that leaves reduced amounts of residueafter heating the die and solder to a temperature where the solderreflows.
 3. The process of claim 1 wherein the steps of cleaning the dieof excess flux residue and driving off the excess liquid are eliminated.4. The process of claim 1 wherein adding the liquefied epoxy to the dieand substrate includes underfilling a space between the die andsubstrate with liquefied epoxy.
 5. The process of claim 4 whereincapillary action is used in underfilling the space between the die andthe substrate.
 6. The process of claim 4 wherein the epoxy ispressurized and injected into the space between the die and thesubstrate in underfilling the space between the die and the substrate.7. The process of claim 1 further comprising placing a lid over the dieand the substrate.
 8. The process of claim 1 wherein adding theliquefied epoxy to the die and substrate includes overmolding the die.9. The process of claim 1 wherein the temperature where the solderreflows differs from the temperature maintained to cure the epoxy. 10.The process of claim 1 wherein the temperature maintained to cure theepoxy is sufficiently lower than the temperature where the solderreflows to prevent the reflow of solder when the epoxy is curing. 11.The process of claim 1 further including selecting an epoxy that curesat a temperature near the temperature associated with reflow of thesolder.
 12. The process of claim 1 further comprising selecting a solderthat leaves insubstantial amounts of a residue as a result of reflow ofthe solder.
 13. A system for forming a semiconductor package comprising:a solder reflow station that heats a die and a substrate to reflowsolder so that the die is electrically connected to the substrate, thereflow station operating at least at a first temperature that allowssolder to reflow; and a station for placing material in contact with atleast a portion of the die at a second temperature, the secondtemperature less than the first temperature wherein the die andsubstrate are heated to the first temperature and cooled to the secondtemperature without cooling the die and substrate to a temperaturesignificantly below the second temperature between the solder reflowstation and the station for placing material in contact with at least aportion of the die.
 14. The system of claim 13 wherein the station forplacing material in contact with a least a portion of the die includes adevice for placing a heated epoxy in contact with the die and thesubstrate.
 15. The system of claim 13 wherein the station for placingmaterial in contact with a least a portion of the die includes a devicefor underfilling the space between the die and the substrate with aheated epoxy.
 16. The system of claim 13 wherein the station for placingmaterial in contact with a least a portion of the die includes a devicefor pressurizing a liquefied epoxy and injecting the liquified epoxyinto a space between the die and the substrate to underfill the spacebetween the die and the substrate.
 17. The system of claim 13 whereinthe station for placing material in contact with a least a portion ofthe die includes a device for underfilling a space between the die andthe substrate with a heated epoxy using capillary action.
 18. The systemof claim 13 wherein the station for placing material in contact with atleast a portion of the die and the solder reflow station are at a singlelocation.
 19. The system of claim 13 further comprising a curing stationfor maintaining the die and substrate at the second temperature for atime sufficient to allow the epoxy to cure.
 20. The system of claim 18wherein the station for placing material in contact with at least aportion of the die, the solder reflow station, and the curing stationare located proximate one another.
 21. The system of claim 13 furthercomprising a curing station for holding the die and substrate at acuring temperature for a time sufficient to allow the epoxy to cure, thedie and substrate held at a temperature at least equal or above thecuring temperature at the solder reflow station and at the station forplacing material in contact with at least a portion of the die.
 22. Thesystem of claim 20 wherein the station for placing material in contactwith at least a portion of the die, the solder reflow station placingmaterial, and the curing station are located proximate one another. 23.A system for packaging a semiconductor device comprising: a first heaterfor heating the die and the substrate to a solder reflow temperature toreflow a solder, and maintaining the die and substrate at the solderreflow temperature; a second heater for liquefying an epoxy; and adevice for moving the liquefied epoxy into contact with a portion of thedie and substrate, the first heater maintaining the die and substrate atan epoxy cure temperature for a selected amount of time.
 24. The systemof claim 23 wherein the epoxy cure temperature is less than the solderreflow temperature.
 25. The system of claim 23 wherein the epoxy curetemperature is less than the temperature at which the solder liquifies.26. The system of claim 23 wherein the first heater lowers the solderreflow temperature to the epoxy cure temperature without goingsubstantially below the epoxy cure temperature.
 27. The system of claim23 wherein the selected amount of time for the first heater to maintainthe die and substrate at the epoxy cure temperature is sufficient toallow the epoxy to cure without causing the solder to reflow.
 28. Thesystem of claim 23 further comprising a flux applicator for applyingflux to the solderable portions of the die and the substrate.
 29. Thesystem of claim 23 wherein the device for moving the liquefied epoxyinto contact with a portion of the die and substrate includes apressurizer for applying a pressure to the liquefied epoxy.
 30. Thesystem of claim 23 further comprising lid placement device for placing alid over the die and the substrate.
 31. The system of claim 23 whereinthe device for moving the liquefied epoxy into contact with a portion ofthe die and substrate includes a device for overmolding the die.